Amorphous silicon based betavoltaic devices

Amorphous silicon based betavoltaic devices

Hydrogenated amorphous silicon betavoltaic devices are studied both by simulation and experimentally. Devices exhibiting a power density of 0.1 W/cm 2 upon Tritium exposure were fabricated. However, a significant degradation of the performance is taking place, especially during the first hours of the exposure. The degradation behavior differs from sample to sample as well as from published resu...

Tritiated Amorphous Silicon Betavoltaic Devices

When prepared by conventional evaporation or sputtering, thin films of amorphous silicon contain a large concentration of defects and microvoids.3,4 These give rise to localized states in the energy gap of the material.3,4 Plasma-enhanced chemical vapor deposition (PECVD), using silicon hydrides, significantly reduces the number of defects and thereby lowers the concentration of localized state...

Tritiated amorphous silicon betavoltaic devices - Circuits, Devices and Systems, IEE Proceedings [see also IEE Proceedings G- Circuits, Devices and

The introduction of tritium into hydrogenated amorphous silicon has given rise to a novel material with interesting physical properties and potential applications. Tritium undergoes radioactive decay, transforming into He and emitting an electron with average energy 5.7keV, at a rate equivalent to a half-life of 12.3 years. The decay of tritium results in the creation of electron– hole pairs an...

Amorphous Silicon Based Neutron Detector

Amorphous Silicon–based Solar Cells

Crystalline semiconductors are very well known, including silicon (the basis of the integrated circuits used in modern electronics), Ge (the material of the first transistor), GaAs and the other III-V compounds (the basis for many light emitters), and CdS (often used as a light sensor). In crystals, the atoms are arranged in near-perfect, regular arrays or lattices. Of course, the lattice must ...